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K2611 Transistor TOSHIBA 2SK2611 900V N-Ch MOSFET TO-3P

K2611 Transistor TOSHIBA 2SK2611 900V N-Ch MOSFET TO-3P

2SK2611 Transistor TOSHIBA K2611 900V N-Ch MOSFET TO-3P

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PKR 150.00

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2SK2611 Transistor TOSHIBA K2611 TO-3P
Product Condition : Refurbished
Absolute Maximum Ratings
1. Drain−source voltage : VDSS = 900 V
2. Drain−gate voltage (RGS = 20 kΩ) : VDGR = 900 V
3. Gate−source voltage : VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C) : PD = 150 W
5. Single pulse avalanche energy : EAS = 663 mJ
6. Avalanche current : IAR = 9 A
7. Repetitive avalanche energy : EAR = 15 mJ

Description: Details

Product Description:

2SK2611 Transistor TOSHIBA K2611 TO-3P
Product Condition : Refurbished
Description:
This K2611 N-Channel enhancement mode power field effect transistors are produced using Winsemi’s
proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance , provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Features:
Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.)
High forward transfer admittance : |Yfs| = 7.0 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings
1. Drain−source voltage : VDSS = 900 V
2. Drain−gate voltage (RGS = 20 kΩ) : VDGR = 900 V
3. Gate−source voltage : VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C) : PD = 150 W
5. Single pulse avalanche energy : EAS = 663 mJ
6. Avalanche current : IAR = 9 A
7. Repetitive avalanche energy : EAR = 15 mJ
Package Included:
1x 2SK2611 Transistor TOSHIBA
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