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BAV70 A4 200mA/70V Dual Surface Mount Switching Diode SOT23-3 Transistor

BAV70 A4 200mA/70V Dual Surface Mount Switching Diode SOT23-3 Transistor

BAV70 A4 200mA/70V Dual Surface Mount Switching Diode SOT-23 Transistor

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BAV70 A4 200mA/70V Dual Surface Mount Switching Diode SOT23-3 Transistor
Type: small signal diode, common cathode
Model: A4/BAV70
Maximum repetitive reverse voltage: 70 V
Forward voltage at:
-forward current IF= 1.0 mA: 0.715 V
-forward current IF = 10 mA: 0.855 V
-forward current IF = 50 mA: 1.0 V
Maximum average value of the rectified forward current: 200 mA
Reverse current at:
-reverse voltage VR=25 V, ambient temperature TA = 150°C: 0.000060 A
-reverse voltage VR=70 V: 0.0000050 A
-reverse voltage VR=70 V, ambient temperature TA = 150°C: 0.000100 A
Non-repetitive peak forward surge current at:
-impulse width=1.0 s: 1.0 A
-impulse width=0.0000010 s: 2.0 A
Total junction capacitance at: reverse voltage VR=0, frequency f=1.0 MHz: 1.5 pF
Reverse recovery time at: forward current IF-10 mA, load resistance RL=100 Ohm: 6.0 ns
Maximum dissipated power: 0.35 W
Storage temperature range: –55 ºC - +150 ºC
Operating junction temperature: 150 ºC
Thermal (heat) resistance (junction to ambient): 357 K/W (ºC/W)
Case: SOT-23
Mounting: SMD

Description: Details

BAV70 A4 200mA/70V Dual Surface Mount Switching Diode SOT23-3 Transistor
Specifications:
Type: small signal diode, common cathode
Model: A4/BAV70
Maximum repetitive reverse voltage: 70 V
Forward voltage at:
-forward current IF= 1.0 mA: 0.715 V
-forward current IF = 10 mA: 0.855 V
-forward current IF = 50 mA: 1.0 V
Maximum average value of the rectified forward current: 200 mA
Reverse current at:
-reverse voltage VR=25 V, ambient temperature TA = 150°C: 0.000060 A
-reverse voltage VR=70 V: 0.0000050 A
-reverse voltage VR=70 V, ambient temperature TA = 150°C: 0.000100 A
Non-repetitive peak forward surge current at:
-impulse width=1.0 s: 1.0 A
-impulse width=0.0000010 s: 2.0 A
Total junction capacitance at: reverse voltage VR=0, frequency f=1.0 MHz: 1.5 pF
Reverse recovery time at: forward current IF-10 mA, load resistance RL=100 Ohm: 6.0 ns
Maximum dissipated power: 0.35 W
Storage temperature range: –55 ºC - +150 ºC
Operating junction temperature: 150 ºC
Thermal (heat) resistance (junction to ambient): 357 K/W (ºC/W)
Case: SOT-23
Mounting: SMD
Package Content:
1pcs x BAV70 A4 Dual Surface Mount Switching Diode SOT23-3 Transistor
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