AT24C04-10SU-2.7 SOP-8 AT24C04 24C04 2-Wire Serial EEPROM IC/SMD
SKU:
2152
In stock
AT24C08 AT24C08N 24C08 SOP8 SOP SMD EEPROM Memory IC
SKU:
2153
In stock
The AT24C08 provides 1024/2048/4096/8192/16384 bits of serial elec-
trically erasable and programmable read-only memory (EEPROM) organized as
128/256/512/1024/2048 words of 8 bits each. The device is optimized for use in many
automotive applications where low-power and low-voltage operation are essential.
The AT24C01A/02/04/08/16 is available in space-saving 8-lead PDIP and 8-lead
JEDEC SOIC packages and is accessed via a two-wire serial interface. In addition,
the entire family is available in 5.0V (4.5V to 5.5V) and 2.7V (2.7V to 5.5V) versions.
AT24C16N 24C16N 24C16 AT24N16 SOP-8 EEPROM IC/SMD
SKU:
2154
In stock
This specification covers a range of 16 Kbit I2C bus
EEPROM products, the ST24C16 and the
ST24W16. In the text, products are referred to
as ST24x16 where "x" is: "C" for Standard ver-
sion and "W" for hardware Write Control version.
The ST24x16 are 16 Kbit electrically erasable
programmable memories (EEPROM), organized
as 8 blocks of 256 x8 bits.
AT24C32N 24C32N 24C32 AT24N32 SOP-8 EEPROM IC/SMD
SKU:
2155
In stock
The AT24C32N series are 32,768/65,536 bits of serial Electrical Erasable and Programmable Read Only Memory,
commonly known as EEPROM.
They are organized as 4096 words of 8 bits (one byte) each.
The devices are fabricated with proprietary advanced CMOS process for low power and low voltage applications.
These devices are available in standard 8-lead DIP, 8-lead SOP, 8-lead TSSOP, 5-lead SOT23, and 5-lead TSOT23 packages.
A standard 2-wire serial interface is used to address all read and write functions.
Our extended VCC range (1.8V to 5.5V) devices enables wide spectrum of applications.
AT89S52-24PU AT89S52 DIP40 8-BIT IC 8KB MCU
SKU:
1263
In stock
AT93C86A-10SI-2.7 SOP-8 AT93C86 93C86A SU27 93C86 16K-Bit E2PROM IC/SMD
SKU:
2159
In stock
The AT93C86A provides 16384 bits of serial electrically erasable programmable read
only memory (EEPROM), organized as 1024 words of 16 bits each when the ORG pin
is connected to VCC and 2048 words of eight bits each when it is tied to ground. The
device is optimized for use in many industrial and commercial applications where lowpower
and low-voltage operations are essential. The AT93C86A is available in space
saving 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead mini-MAP (MLP 2x3), and 8-lead
TSSOP packages.
BAT54C KL3 0.2A/30V SOT23-3 Schottky barrier diodes SMD transistor
SKU:
2852
In stock
BAT54C KL3 0.2A/30V SOT23-3 Schottky barrier diodes SMD transistor
Specifications:
Type Designator: BAT54C
Technical parameters (25 ? C):
Diode connection diagram: Common cathode
Maximum operating current: 0.2 A
Maximum reverse voltage: 30 V
Maximum impulse current: 0.6 A
Maximum forward voltage: 0.8 V
Maximum continuous reverse current at rated blocking voltage: 2 ?A
Package Content:
1pcs BAT54C KL3 SOT23-3 SMD transistor
BAV199 SOT-23 labeled JY Formed SMD
SKU:
3068
In stock
65Z5 voltage regulator smd transistor XC6206P302MR 3V current 140MA positive SOT23-3 chip silk screen
IC, POS VOLT REG, 0.3A, 3.0V, SOT23-3
Input Voltage Min: 1.8V
Input Voltage Max: 6V
Output Voltage Nom.: 3.0V
Output Current: 200mA
Dropout Voltage Vdo: 250mV
LDO Regulator Case Style: SOT-23
No. of Pins: 3
BAV70 A4 200mA/70V Dual Surface Mount Switching Diode SOT23-3 Transistor
SKU:
2844
In stock
BAV70 A4 200mA/70V Dual Surface Mount Switching Diode SOT23-3 Transistor
Type: small signal diode, common cathode
Model: A4/BAV70
Maximum repetitive reverse voltage: 70 V
Forward voltage at:
-forward current IF= 1.0 mA: 0.715 V
-forward current IF = 10 mA: 0.855 V
-forward current IF = 50 mA: 1.0 V
Maximum average value of the rectified forward current: 200 mA
Reverse current at:
-reverse voltage VR=25 V, ambient temperature TA = 150?C: 0.000060 A
-reverse voltage VR=70 V: 0.0000050 A
-reverse voltage VR=70 V, ambient temperature TA = 150?C: 0.000100 A
Non-repetitive peak forward surge current at:
-impulse width=1.0 s: 1.0 A
-impulse width=0.0000010 s: 2.0 A
Total junction capacitance at: reverse voltage VR=0, frequency f=1.0 MHz: 1.5 pF
Reverse recovery time at: forward current IF-10 mA, load resistance RL=100 Ohm: 6.0 ns
Maximum dissipated power: 0.35 W
Storage temperature range: ?55 ?C - +150 ?C
Operating junction temperature: 150 ?C
Thermal (heat) resistance (junction to ambient): 357 K/W (?C/W)
Case: SOT-23
Mounting: SMD
BAV99LT1G BAV99 A7 0.2A SMD SOT23-3 Switching Diode
SKU:
2890
In stock
BC557B Silicon PNP Transistors 45V 100mA 500mW Amplifier TO-92 Case
SKU:
2937
In stock
BC557B Silicon PNP Transistors 45V 100mA 500mW Amplifier TO-92 Case
Bi-Polar PNP Transistor
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage Vcb: 50 V
Maximum Collector-Emitter Voltage Vce: 45 V
Maximum Emitter-Base Voltage Veb: 5 V
Maximum Collector Current Ic max: 0.2 A
Transition Frequency (ft): 75 MHz
DC Current Gain (hFE) is 300 maximum
Continuous Collector current (IC) is 100mA
Emitter Base Voltage (VBE) is 6V
Base Current(IB) is 5mA maximum