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2N2907 SOT23-3 2F PNP Switching SMD Transistor -V / 60V / 0.6A

SKU: 2885

In stock

PKR  7
2N2907 SOT23-3 2F PNP Switching SMD Transistor -V / 60V / 0.6A Type Designator: 2N2907 Collector-Emitter Voltage: -60 V Collector-Base Voltage: -60 V Emitter-Base Voltage: -5 V Collector Current: -0.8 A Collector Dissipation - 0.35 W DC Current Gain (hfe) - 100 to 300 Transition Frequency - 200 MHz Operating and Storage Junction Temperature Range -55 to +150 ?C
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Last updated: March 12, 2024

2N3904 3904 TO-92 NPN Transistor

SKU: 2995

In stock

PKR  5
Bi-Polar NPN Transistor DC Current Gain (hFE) is 300 maximum Continuous Collector current (IC) is 200mA Base- Emitter Voltage (VBE) is 6V Collector-Emitter Voltage (VCE) is 40V Collector-Base Voltage (VCB) is 60V Available in To-92 Package
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Last updated: March 12, 2024

2N3906 3906 TO-92 NPN Transistor

SKU: 2996

In stock

PKR  5
Product Name : PNP Transistor;Model : 2N3906;Quantity : 50 2% Pcs Collector Base Voltage : 40V;Collector Emitter Voltage : 40V;Emitter Base Voltage : 5V Collector Current(Continuous) : 200mA;Collector Power Dissipation : 625mW;Pin Size : 14 x 0.5mm/ 0.551" x 0.019" ( L* D) Body Dimension : 4 x 3 x 4mm/ 0.16" x 0.12" x 0.16" (L*W*T);Pitch : 1.5mm/0.059";Main Color : Black Weight : 22g; Descritpion: PNP type Bipolar Transistors with 3 pin for inserting into device. Package: TO-92 .
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Last updated: March 12, 2024

2N4401 TO-92 NPN Transistor

SKU: 2999

In stock

PKR  5
General purpose NPN Transistor High DC Current Gain (hFE), typically 80 when IC=10mA Continuous Collector current (IC) is 500mA Collector-Emitter voltage (VCE) is 40 V Collector-Base voltage (VCB) is 60V Emitter Base Breakdown Voltage (VBE) is 6V Transition Frequency is 100MHz Available in To-92 Package
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Last updated: March 12, 2024

2N5088 5088 PNP TO-92 Transistor

SKU: 2998

In stock

PKR  10
Type Designator: 2N5088 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.36 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 30 V Maximum Collector Current |Ic max|: 1 A Max. Operating Junction Temperature (Tj): 200 ?C Transition Frequency (ft): 500 MHz Collector Capacitance (Cc): 7 pF Forward Current Transfer Ratio (hFE), MIN: 200
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Last updated: March 12, 2024

2N7002 7002 60V 300mA 0.83W N-Channel Trench MOSFET SOT23-3 SMD Transistor

SKU: 2860

In stock

PKR  5
2N7002 7002 60V 300mA 0.83W N-Channel Trench MOSFET SOT23-3 SMD Transistor N-Channel MOSFET with low on-state resistance Continuous Drain Current (ID) is 200mA Drain Source Voltage (VDS) is 60V On-state Resistance is <5? Minimum Gate threshold voltage (VGS-th) is 1V Maximum Gate threshold voltage (VGS-th) is 3V Turn ON and Turn off time is 15ns and 8ns each
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Last updated: March 20, 2024

2SB772 SOT89 B772 SMD SOT-89 PNP MEDIUM POWER TRANSISTOR

SKU: 2855

In stock

PKR  25
1.5MHz 2A Synchronous Step-Down Regulator Dropout TD6817 The TD6817 is a high efficiency monolithic synchronous buck regulator using a constant frequency, current mode architecture. The device is available in an adjustable version and fixed output voltages of 1.5V and 1.8V. Supply current during operation is only 20mA and drops to ?1mA in shutdown. The 2.5V to 5.5V input voltage range makes the TD6817 ideally suited for single Li-Ion battery-powered applications. 100% duty cycle provides low dropout operation, extending battery life in portable systems.Automatic Burst Mode operation increases efficiency at light loads, further extending battery life. Switching frequency is internally set at 1.5MHz, allowing the use of small surface mount inductors and capacitors. The internal synchronous switch increases efficiency and eliminates the need for an external Schottky diode. Low output voltages are easily supported with the 0.6V feedback reference voltage. The TD6817 is available in TSOT23-5 package. High Efficiency: Up to 96% High Efficiency at light loads Very Low Quiescent Current: Only 20uA During Operation 2A Output Current 2.5V to 5.5V Input Voltage Range 1.5MHz Constant Frequency Operation No Schottky Diode Required Low Dropout Operation: 100% Duty Cycle 0.6V Reference Allows Low Output Voltages Shutdown Mode Draws ?1uA Supply Current Current Mode Operation for Excellent Line and Load Transient Response Overtemperature Protected TSOT23-5 Package is Available
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Last updated: March 12, 2024

2SC1623 C1623 L6 SOT23-3 Transistor NPN SMD 50V 100mA

SKU: 2841

In stock

PKR  5
2SC1623 C1623 L6 SOT23-3 Transistor NPN SMD 50V 100mA Specifications: Type Designator: 2SC1623 Collector-Emitter Voltage: 50 V Collector-Base Voltage: 60 V Emitter-Base Voltage: 5 V Collector Current: 0.1 A Collector Dissipation - 0.2 W DC Current Gain (hfe) - 90 to 600 Transition Frequency - 250 MHz Operating and Storage Junction Temperature Range -55 to +150 ?C Package Content: 1pcs x 2SC1623 C1623 L6 SOT23-3 SMD Transistor
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Last updated: March 12, 2024

2SC3357-T1 RF high frequency tube C3357 SOT-89 SMD Transistor

SKU: 2851

In stock

PKR  20
2SC3357-T1 RF high frequency tube C3357 SOT-89 SMD Transistor Type Designator: 2SC3357 SMD Transistor Code: RF Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.4 W Maximum Collector-Base Voltage |Vcb|: 20 V Maximum Collector Current |Ic max|: 0.1 A Max. Operating Junction Temperature (Tj): 125 ?C Transition Frequency (ft): 6500 MHz Forward Current Transfer Ratio (hFE), MIN: 40 Noise Figure, dB
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Last updated: March 12, 2024

2SC945 C945 50V 150mA 200mW SOT23-3 SMD Transistor

SKU: 2887

In stock

PKR  5
2SC945 CR 50V 150mA 200mW SOT23-3 SMD Transistor Description: Type Designator: GP Silicon Transistor SMD Transistor Code: K3P Type of Transistor: General Purpose Switching Polarity: NPN Maximum Power Dissipation (Pd): 200mW Collector-Base Voltage |Vdc|: 60V Collector-Emitter Voltage |Vdc|: 50V Collector Current |Ic|: 150mA Emitter-Base |Vdc|: 5V Transision Frequency: 150MHz Package Content: 1pc 2SC945 CR SMD SOT23-3 Transistor
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Last updated: March 12, 2024

4558D SOP8 NJM4558D SOP 4558 SMD JRC4558D JRC44558 Dual OP AMP

SKU: 3060

In stock

PKR  25
4558D SOP8 NJM4558D SOP 4558 SMD JRC4558D JRC44558 Dual OP AMP DUAL OPERATIONAL AMPLIFIER 1. Operating Voltage ( ?4V~?18V ) 2. High Voltage Gain ( 100dB typ. ) 3. High Input Resistance ( 5M? typ. ) 4. Bipolar Technology
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Last updated: April 1, 2024

5815M RDA5815M QFN-20 Signal IC Original DG series

SKU: 2836

In stock

PKR  65 - PKR  100
5815M RDA5815M QFN-20 Signal IC Single-chip RF-to-baseband Satellite receiver CMOS Fully integrated RF front end Low noise and wide dynamic range zero-IF receiver Input frequency range: 900 to 2200 MHz Input signal level: -100 to 5 dBm More than 85dB gain control range Fully integrated PLL (dividers, charge pump, phase & frequency detectors, loop filters, etc.) Integrated RX VCO Integrated baseband LPF with selectable cut-off frequency from 4MHz to 40MHz with 1MHz step Integrated LNAwith RF AGC Integrated reference oscillator (27MHz is defult) I 2C bus interface Automatic gain control 0.11?m RF CMOS technology 3V to 3.6V operation
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Last updated: April 15, 2024