D313 npn Transistor Audio amplifier
SKU:
3155
UTC D313 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR
The UTC D313 is designed for use in general purpose amplifier and switching applications.
1 TO-220
1:BASE
2:COLLECTOR
3:EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Storage Temperature Junction Temperature SYMBOL VCBO VCEO VEBO Ic TSTG Tj VALUE 60 60 5 3 -55 ~ +150 150 UNIT V V V A °C °C ELECTRICAL CHARACTERISTICS(Ta=25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base
IRFB 4115 Power MOSFET N channel
SKU:
3157
IRFB4110 N-CHANNEL TRANSISTOR 100V 120A
SKU:
3158
Type Designator: IRFB4110
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 370 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 180 A
Maximum Junction Temperature (Tj): 175 °C