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D313 npn Transistor Audio amplifier

SKU: 3155
PKR  25
UTC D313 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR The UTC D313 is designed for use in general purpose amplifier and switching applications. 1 TO-220 1:BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Storage Temperature Junction Temperature SYMBOL VCBO VCEO VEBO Ic TSTG Tj VALUE 60 60 5 3 -55 ~ +150 150 UNIT V V V A °C °C ELECTRICAL CHARACTERISTICS(Ta=25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base

IRFB 4115 Power MOSFET N channel

SKU: 3157
PKR  280
1. High Efficiency Synchronous Rectification in SMPS 2. Uninterruptible Power Supply 3. High Speed Power Switching 4. Hard Switched and High Frequency Circuits


SKU: 3158
PKR  290
Type Designator: IRFB4110 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 370 W Maximum Drain-Source Voltage |Vds|: 100 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 180 A Maximum Junction Temperature (Tj): 175 °C