BC557B Silicon PNP Transistors 45V 100mA 500mW Amplifier TO-92 Case
Description:
BC557 PNP Bi-Polar transistor
ESuitable For use in Driver Stages of Audio Amplifiers, Low Noise Input
Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing Circuits of Television
Receivers, switching.
Specification:
Bi-Polar PNP Transistor
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage Vcb: 50 V
Maximum Collector-Emitter Voltage Vce: 45 V
Maximum Emitter-Base Voltage Veb: 5 V
Maximum Collector Current Ic max: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: –
DC Current Gain (hFE) is 300 maximum
Continuous Collector current (IC) is 100mA
Emitter Base Voltage (VBE) is 6V
Base Current(IB) is 5mA maximum
To-92 Package
Package Included:
1x BC557B Silicon PNP Transistors TO-92
BC557B Silicon PNP Transistors 45V 100mA 500mW Amplifier TO-92 Case buy in Pakistan
PKR 5
BC557B Silicon PNP Transistors 45V 100mA 500mW Amplifier TO-92 Case
Bi-Polar PNP Transistor
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage Vcb: 50 V
Maximum Collector-Emitter Voltage Vce: 45 V
Maximum Emitter-Base Voltage Veb: 5 V
Maximum Collector Current Ic max: 0.2 A
Transition Frequency (ft): 75 MHz
DC Current Gain (hFE) is 300 maximum
Continuous Collector current (IC) is 100mA
Emitter Base Voltage (VBE) is 6V
Base Current(IB) is 5mA maximum
62 in stock
CompareBC557B Silicon PNP Transistors 45V 100mA 500mW Amplifier TO-92 Case
Description:
BC557 PNP Bi-Polar transistor
ESuitable For use in Driver Stages of Audio Amplifiers, Low Noise Input
Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing Circuits of Television
Receivers, switching.
Specification:
Bi-Polar PNP Transistor
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage Vcb: 50 V
Maximum Collector-Emitter Voltage Vce: 45 V
Maximum Emitter-Base Voltage Veb: 5 V
Maximum Collector Current Ic max: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: –
DC Current Gain (hFE) is 300 maximum
Continuous Collector current (IC) is 100mA
Emitter Base Voltage (VBE) is 6V
Base Current(IB) is 5mA maximum
To-92 Package
Package Included:
1x BC557B Silicon PNP Transistors TO-92
Weight | 0.001 kg |
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