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Power MOSFET IRF740 IRF 740 400V 10A n channel NMOS transistor buy in Pakistan
PKR 65
In stock
کسٹمر کو رقم ادائیگی سے پہلے پارسل کھولنے کی اجازت ہے
| Weight | 0.001 kg |
|---|
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Continuous Drain Current, VGS @ 10V = 110 A
Pulsed Drain Current = 390 A
At 25°C Power Dissipation = 200 W
Linear Derating Factor = 1.3 W/°C
Gate-to-Source Voltage = ± 20 V
Avalanche Current = 62 A
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Description
Power MOSFET IRF740 IRF 740 400V 10A n channel NMOS transistor
Product Description:
N-Channel Metallic Oxide Semiconductor Field Effect Transistors (MOSFET) find use in circuit
applications where high power switching is required. Unlike transistors which require high current
drive signals to turn fully on, MOSFETs can be turned on with drive signals having low currents but with
voltage above the Gate Threshold Voltage (VGS(th)) of the MOSFET; which is usualy around 4V.
To turn a MOSFET fully on, usually a voltage of up to 10V is required. The Gate terminal of a MOSFET behaves
like a capacitor, to turn on and off a MOSFET at high speeds, the drive signal must have a sufficient amount of
current in order to charge and discharge the gate capacitor quickly. Always use a MOSFET with a heatsink when
switching high power. The gate of a MOSFET should never be left floating in a circuit.
MOSFETs are highly sensitive to electrostatic discharge (ESD), always handle them with care.
Consider using MOSFETs in projects such as motor drive circuits, Inverters, AC Voltage Regulators,
DC-DC Converters, Linear Audio Amplifiers and Class-D Audio Amplifiers.
Specifications:
IRF740 N-Channel Power MOSFET For Fast,
High Power Switching Applications.
VDSS: 400V,
ID: 10A,
RDS(on): 0.55Ω,
PD: 125W
Condition : Brand New
Package Included:
1x IRF740 N-Channel
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