Type Designator: IRFB4110
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 370 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 180 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 150 nC
Rise Time (tr): 67 nS
Drain-Source Capacitance (Cd): 670 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm
product contains:
1x IRFB4110 ORIGINAL N-CHANNEL TRANSISTOR 100V 120A
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