AOTF12N50 500V 12A N-Channel MOSFET
SKU:
3174
In stock
- The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs
IRF 20N60 600V N-CHANNEL POWER MOSFET
SKU:
3170
In stock
The UTC 20N60 is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with planar stripe and DMOS technology. This technology is
specialized in allowing a minimum on-state resistance and superior
switching performance. It also can withstand high energy pulse in
the avalanche and commutation mode.
The UTC 20N60 is universally applied in motor control, UPS, DC
choppers and switch-mode and resonant-mode power supplies.
IRF75N75 N-CHANNEL POWER MOSFET
SKU:
3161
In stock
UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) ≤ 11 mΩ @ VGS=10V, ID=40A * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-263 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free.
IRFP250 MOSFET Power Transistor 200V 30A
SKU:
3154
In stock
Mosfet IRF3205 power 110A 200W
SKU:
1163
In stock
Continuous Drain Current, VGS @ 10V = 110 A
Pulsed Drain Current = 390 A
At 25°C Power Dissipation = 200 W
Linear Derating Factor = 1.3 W/°C
Gate-to-Source Voltage = ± 20 V
Avalanche Current = 62 A
Repetitive Avalanche Energy = 20 mJ
dv/dt Peak Diode Recovery dv/dt = 5.0 V/ns
Operating Junction and Soldering Temperature, for 10 seconds = 300 (1.6mm from case )°C
