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AOTF12N50 500V 12A N-Channel MOSFET

SKU: 3174

In stock

PKR  60
  • The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs


SKU: 3170

In stock

PKR  170
The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 20N60 is universally applied in motor control, UPS, DC choppers and switch-mode and resonant-mode power supplies.


SKU: 3161

In stock

PKR  130
UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.  FEATURES * RDS(ON) ≤ 11 mΩ @ VGS=10V, ID=40A * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-263  SYMBOL 2.Drain 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free.

IRFP250 MOSFET Power Transistor 200V 30A

SKU: 3154

In stock

PKR  320

IRFP250 IRFP250N MOSFET Power Transistor Specifications

  • VDSS = 200V
  • RDS(on) = 0.075
  • ID = 30A
  • VDS (V) 200
  • RDS(on) (Ω) VGS = 10 V 0.085
  • Qg (Max.) (nC) 140
  • Qgs (nC) 28
  • Qgd (nC) 74
  • Configuration Single
  • N-Channel MOSFET

Mosfet IRF3205 power 110A 200W

SKU: 1163

In stock

PKR  110
Continuous Drain Current, VGS @ 10V = 110 A Pulsed Drain Current = 390 A At 25°C Power Dissipation = 200 W Linear Derating Factor = 1.3 W/°C Gate-to-Source Voltage = ± 20 V Avalanche Current = 62 A Repetitive Avalanche Energy = 20 mJ dv/dt Peak Diode Recovery dv/dt = 5.0 V/ns Operating Junction and Soldering Temperature, for 10 seconds = 300 (1.6mm from case )°C