Home » MOSFET

Showing all 4 results

AOTF12N50 500V 12A N-Channel MOSFET

SKU: 3174

In stock

PKR  60
  • The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs

IRF75N75 N-CHANNEL POWER MOSFET

SKU: 3161

In stock

PKR  130
UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.  FEATURES * RDS(ON) ≤ 11 mΩ @ VGS=10V, ID=40A * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-263  SYMBOL 2.Drain 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free.

IRFP250 MOSFET Power Transistor 200V 30A

SKU: 3154

In stock

PKR  320

IRFP250 IRFP250N MOSFET Power Transistor Specifications

  • VDSS = 200V
  • RDS(on) = 0.075
  • ID = 30A
  • VDS (V) 200
  • RDS(on) (Ω) VGS = 10 V 0.085
  • Qg (Max.) (nC) 140
  • Qgs (nC) 28
  • Qgd (nC) 74
  • Configuration Single
  • N-Channel MOSFET

Mosfet IRF3205 power 110A 200W

SKU: 1163

In stock

PKR  110
Continuous Drain Current, VGS @ 10V = 110 A Pulsed Drain Current = 390 A At 25°C Power Dissipation = 200 W Linear Derating Factor = 1.3 W/°C Gate-to-Source Voltage = ± 20 V Avalanche Current = 62 A Repetitive Avalanche Energy = 20 mJ dv/dt Peak Diode Recovery dv/dt = 5.0 V/ns Operating Junction and Soldering Temperature, for 10 seconds = 300 (1.6mm from case )°C