BC557B Silicon PNP Transistors 45V 100mA 500mW Amplifier TO-92 Case
Description:
BC557 PNP Bi-Polar transistor
ESuitable For use in Driver Stages of Audio Amplifiers, Low Noise Input
Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing Circuits of Television
Receivers, switching.
Specification:
Bi-Polar PNP Transistor
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage Vcb: 50 V
Maximum Collector-Emitter Voltage Vce: 45 V
Maximum Emitter-Base Voltage Veb: 5 V
Maximum Collector Current Ic max: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: –
DC Current Gain (hFE) is 300 maximum
Continuous Collector current (IC) is 100mA
Emitter Base Voltage (VBE) is 6V
Base Current(IB) is 5mA maximum
To-92 Package
Package Included:
1x BC557B Silicon PNP Transistors TO-92
BC557B Silicon PNP Transistors 45V 100mA 500mW Amplifier TO-92 Case in Pakistan
PKR 5
In stock
کسٹمر کو رقم ادائیگی سے پہلے پارسل کھولنے کی اجازت ہے
SKU:
2937
Categories: ICs, Receiver ICs and SMD SOT23
BC557B Silicon PNP Transistors 45V 100mA 500mW Amplifier TO-92 Case
Bi-Polar PNP Transistor
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage Vcb: 50 V
Maximum Collector-Emitter Voltage Vce: 45 V
Maximum Emitter-Base Voltage Veb: 5 V
Maximum Collector Current Ic max: 0.2 A
Transition Frequency (ft): 75 MHz
DC Current Gain (hFE) is 300 maximum
Continuous Collector current (IC) is 100mA
Emitter Base Voltage (VBE) is 6V
Base Current(IB) is 5mA maximum
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Description
BC557B Silicon PNP Transistors 45V 100mA 500mW Amplifier TO-92 Case
Description:
BC557 PNP Bi-Polar transistor
ESuitable For use in Driver Stages of Audio Amplifiers, Low Noise Input
Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing Circuits of Television
Receivers, switching.
Specification:
Bi-Polar PNP Transistor
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage Vcb: 50 V
Maximum Collector-Emitter Voltage Vce: 45 V
Maximum Emitter-Base Voltage Veb: 5 V
Maximum Collector Current Ic max: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: –
DC Current Gain (hFE) is 300 maximum
Continuous Collector current (IC) is 100mA
Emitter Base Voltage (VBE) is 6V
Base Current(IB) is 5mA maximum
To-92 Package
Package Included:
1x BC557B Silicon PNP Transistors TO-92
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