Product Description:
2N7002 7002 60V 300mA 0.83W N-Channel Trench MOSFET SOT23-3 SMD Transistor
Description:
MOSFET N-CHANNEL 60V 115mA.The 2N7002 is a N-channel enhancement mode Field Effect
Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance
while providing rugged, reliable and fast switching performance. It can be used in most applications
requiring up to 400mA DC and can deliver pulsed currents up to 2A. Suitable for low-voltage,
low-current applications, such as small servo motor control and power MOSFET gate
Features
N-Channel MOSFET with low on-state resistance
Continuous Drain Current (ID) is 200mA
Drain Source Voltage (VDS) is 60V
On-state Resistance is <5?
Minimum Gate threshold voltage (VGS-th) is 1V
Maximum Gate threshold voltage (VGS-th) is 3V
Turn ON and Turn off time is 15ns and 8ns each
Package Content:
1pcs 2N7002 N-Channel Trench MOSFET SOT-23 SMD Transistor
2N7002 7002 60V 300mA 0.83W N-Channel Trench MOSFET SOT23-3 SMD Transistor
PKR 5
In stock
کسٹمر کو رقم ادائیگی سے پہلے پارسل کھولنے کی اجازت ہے
2N7002 7002 60V 300mA 0.83W N-Channel Trench MOSFET SOT23-3 SMD Transistor
N-Channel MOSFET with low on-state resistance
Continuous Drain Current (ID) is 200mA
Drain Source Voltage (VDS) is 60V
On-state Resistance is <5?
Minimum Gate threshold voltage (VGS-th) is 1V
Maximum Gate threshold voltage (VGS-th) is 3V
Turn ON and Turn off time is 15ns and 8ns each
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Product Description:
2N7002 7002 60V 300mA 0.83W N-Channel Trench MOSFET SOT23-3 SMD Transistor
Description:
MOSFET N-CHANNEL 60V 115mA.The 2N7002 is a N-channel enhancement mode Field Effect
Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance
while providing rugged, reliable and fast switching performance. It can be used in most applications
requiring up to 400mA DC and can deliver pulsed currents up to 2A. Suitable for low-voltage,
low-current applications, such as small servo motor control and power MOSFET gate
Features
N-Channel MOSFET with low on-state resistance
Continuous Drain Current (ID) is 200mA
Drain Source Voltage (VDS) is 60V
On-state Resistance is <5?
Minimum Gate threshold voltage (VGS-th) is 1V
Maximum Gate threshold voltage (VGS-th) is 3V
Turn ON and Turn off time is 15ns and 8ns each
Package Content:
1pcs 2N7002 N-Channel Trench MOSFET SOT-23 SMD Transistor
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