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BC847B SOT23 BC847 SOT SMD 847B SOT23-3 1F transistor

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Last updated: 20 March, 2024
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SKU: 2838 Categories: ,

BC847B SOT23 BC847 SOT SMD 847B SOT23-3 1F transistor
Type Designator: BC847
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 ?C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: –

Description

BC847B SOT23 BC847 SOT SMD 847B SOT23-3 1F transistor
Specifications:
Type Designator: BC847
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: –
Package Including:
1PC x BC847B SOT23 BC847 SOT SMD 847B SOT23-3 1F transistor

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BC847B SOT23 BC847 SOT SMD 847B SOT23-3 1F transistor
Specifications:
Type Designator: BC847
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: –
Package Including:
1PC x BC847B SOT23 BC847 SOT SMD 847B SOT23-3 1F transistor