MMBT5401 2L SOT23-3 2N5401 SMD PNP high voltage transistor
Specifications:
Type Designator: GSTMMBT5401
SMD Transistor Code: 2L
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package Content:
1pcs MMBT5401 2L SOT23-3 SMD transistor
MMBT5401 2L SOT23-3 2N5401 SMD PNP high voltage transistor
PKR 10
In stock
کسٹمر کو رقم ادائیگی سے پہلے پارسل کھولنے کی اجازت ہے
SKU:
2858
Categories: Electronic Components, ICs, Receiver ICs and SMD SOT23
MMBT5401 2L SOT23-3 2N5401 SMD PNP high voltage transistor
Type Designator: GSTMMBT5401
SMD Transistor Code: 2L
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 ?C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
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Description
MMBT5401 2L SOT23-3 2N5401 SMD PNP high voltage transistor
Specifications:
Type Designator: GSTMMBT5401
SMD Transistor Code: 2L
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package Content:
1pcs MMBT5401 2L SOT23-3 SMD transistor
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