BFG591 SOT89 BFG591A TRANSISTOR NPN 7 GHz wideband transistor

Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 04

FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment. PINNING PIN base emitter collector DESCRIPTION emitter

DESCRIPTION NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package.

QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM s 21 Note Ts is the temperature at the soldering point of the collector pin.

PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain open base

CONDITIONS open emitter = 80 °C; note = 70 mA; VCE = 0; VCE = 1 MHz = 70 mA; VCE = 1 GHz = 70 mA; VCE = 900 MHz; Tamb = 70 mA; VCE = 900 MHz; Tamb °C –

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature = 80 °C; note 1 CONDITIONS open emitter open base open collector MIN.

THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point note 1 CONDITIONS VALUE 35 UNIT K/W

Note to the Limiting values and Thermal characteristics Ts is the temperature at the soldering point of the collector pin