SI2302DS SI2302 A2SHB SOT23 Triode SOT23-3 SMD transistor

SI2302DS SI2302 A2SHB SOT23 Triode SOT23-3 SMD transistor
N-Channel 1.25-W, 2.5-V MOSFET
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.2 V
Maximum Drain Current |Id|: 2.3 A
Maximum Junction Temperature (Tj): 150 ?C
Rise Time (tr): 36 nS
Drain-Source Capacitance (Cd): 115 pF
Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm