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IRF 20N60 600V N-CHANNEL POWER MOSFET
SKU:
3170
In stock
The UTC 20N60 is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with planar stripe and DMOS technology. This technology is
specialized in allowing a minimum on-state resistance and superior
switching performance. It also can withstand high energy pulse in
the avalanche and commutation mode.
The UTC 20N60 is universally applied in motor control, UPS, DC
choppers and switch-mode and resonant-mode power supplies.
IRF1404 To220 Voltage Regulator Mosfet
SKU:
2929
In stock
Irf1404 To220 Voltage Regulator Irf1404 Mosfet
Type Designator: IRF1404
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Package Type: TO-220AB
Transistor Type: N Channel
Max Voltage Applied From Drain to Source: 40V
Max Gate to Source Voltage Should Be: ?20V
Max Continues Drain Current is : 162A
Max Pulsed Drain Current is: 650A
Max Power Dissipation is: 200W
Minimum Gate Threshold Voltage is: 2V to 4V
Max Storage & Operating temperature Should Be: -55 to +175 Centigrade
IRF1407 IRF 1407 MOSFET Transistor TO-220AB “IR” N CHANNEL 75V 130A
SKU:
2482
In stock
Irf150 Mosfet NChannel Power Transistor
SKU:
3171
In stock
IRF3710 Mosfet N-Ch 100V 57A To-220Ab IRF3710
SKU:
2678
In stock
IRF75N75 N-CHANNEL POWER MOSFET
SKU:
3161
In stock
UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) ≤ 11 mΩ @ VGS=10V, ID=40A * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-263 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free.
IRF80NF70 N-CHANNEL POWER MOSFET
SKU:
3162
In stock
80NF70 N-channel 68 V, 0.0082 Ω , 98 A, TO-220 STripFET™ II Power MOSFET Features Type STP80NF70 ■ ■ VDSS 68 V RDS(on) max < 0.0098 Ω ID 98 A Exceptional dv/dt capability 100% avalanche tested 1 3 2 Application ■ TO-220 Switching applications Description The STP80NF70 is a N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications
IRFB 4115 Power MOSFET N channel
SKU:
3157
In stock
IRFB4110 N-CHANNEL TRANSISTOR 100V 120A
SKU:
3158
In stock
Type Designator: IRFB4110
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 370 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 180 A
Maximum Junction Temperature (Tj): 175 °C
IRFP250 MOSFET Power Transistor 200V 30A
SKU:
3154
In stock
LM7809 Voltage Regulator
SKU:
2678-1
In stock
- 9V Positive Voltage Regulator
- Minimum Input Voltage is 11V
- Maximum Input Voltage is 35V
- Output Current: 1.5 A
- PSRR / Ripple Rejection: 55 dB
- Output Type: Fixed
- Internal Thermal Overload and Short circuit current limiting protection is available.
- Junction Temperature maximum of 125 degree Celsius
- Available in TO-220, TO-3 and KTE package
Voltage Regulators Mosfets and IRFs